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FZT688B - NPN Silicon Planar Medium Power High Gain Transistor

Key Features

  • Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO.

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SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT688B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 12 12 5 4 10 2 -55 to +150 Unit V V V A A W www.kexin.com.