FDS6930B
Features
- VDS (V) = 30V
- ID = 5.5 A (VGS = 10V)
- RDS(ON) ＜ 38mΩ (VGS = 10V)
- RDS(ON) ＜ 50mΩ (VGS = 4.5V)
- Fast switching speed
- High power and current handling capability
SOP-8
Unit:mm
+0.040.21 -0.02
1.50 0.15
1 S2 2 G2 3 S1 4 G1
5 D1 6 D1 7 D2 8 D2
54 63 72 81
- Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current Pulsed Drain Current
(Note.1)
Symbol VDS VGS ID IDM
Power Dissipation
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
(Note.1) (Note.2) (Note.3) (Note.1)
Rth JA Rth JC
TJ Tstg
Note.1: 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper Note.2: 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper Note.3: 135°C/W when mounted on a minimum pad.
Rating 30
±20 5.5 20 2 1.6 1 0.9 78 40 150 -55 to 150
Unit V A
℃/W ℃
.kexin..cn 1
SMD Type
MOSFET
Dual N-Channel MOSFET
FDS6930B (KDS6930B)
- Electrical Characteristics...
