ƽ Metal silicon junction, majority carrier conduction ƽ For surface mounted applications ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For u.

ƽ Low power loss, high efficiency ƽ High forward surge current capability ƽ For use in low voltage, high frequency inver.

PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć unless otherwise specified Parameter Symbol ES 1AF Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage Maximum DC Blocking Voltage Instantaneous Forward Voltage at 1A .

ES1D

ES1D-A

ES1D-T

ES1DAF

ES1DAS

ES1DB

ES1DBF

ES1DE

ES1DFA

ES1DFL

ES1DL

ES1DLW

ES1DS

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