BAS521 Datasheet | Kexin Semiconductor

Features - High switching speed: trr ≤ 50 ns - High reverse voltage: VR ≤ 300 V - Repetitive peak forward current: IFRM ≤ 1 A - High-speed switching - High-voltage switching 1 cathode 2 anode SOD-523 1.2 +0.1 -0.1 + - +0.050.3 -0.05 0.6 +0.1 -0.1 +0.050.8 -0.05 1.6 +0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Unit: mm - Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage Reverse Voltage Forward Current @ Tsp ≤ 90 °C Repetitive Peak Forward Current Non-repetitive peak forward surge current (t=1us) Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Solder Point Junction Temperature Storage Temperature range Symbol VRM VR IF IFRM IFSM Pd RθJA RθJSP TJ Tstg Rating 300 300 250 1 4.5 500 500 120 150 -65 to 150 Unit V m A A m W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage (Note.1) Reverse voltage leakage current Junction capacitance Reverse recovery time Symbol Test Conditions VR IR= 100 u A VF IF= 100 m A VR= 250 V...