2SJ302-ZJ Datasheet | Kexin Semiconductor

Features - VDS (V) =-60V - ID =-16 A - RDS(ON) ＜ 100mΩ (VGS =-10V) - RDS(ON) ＜ 240mΩ (VGS =-4V) MOSFET - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Symbol VDS VGS ID IDM PD TJ Tstg Rating -60 -20,+10 -16 -64 75 150 -55 to 150 Unit V A W ℃ .kexin..cn 1 SMD Type P-Channel MOSFET 2SJ302-ZJ - Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Cut off Voltage VGS(off) Static Drain-Source On-Resistance RDS(On) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Diode Forward Voltage g FS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr Qrr...