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2SD1898 - Power Transistor

Features

  • High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature.
  • 1. Pw=20ms.
  • 2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current For.

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SMD Type Power Transistor 2SD1898 Transistors Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1. Pw=20ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC *2 Tj Tstg Rating 120 80 5 1 2 0.
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