2SC4601 Datasheet | Kexin Semiconductor

Features + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4601-applied equipment. + 0 .2 8 .7 -0 .2 High density surface mount applications. Small size of 2SC4601-applied equipment. High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 5.08 +0.1 -0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) - Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range - PW 300ms, duty cycle 10% Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 1100 800 7 1.5 5 0.8 1.65 40 150 -55 to +150 A W Unit V V V A 5 .6 0 1,Base 2,Collector 3,Emitter .kexin..cn Free Datasheet http://../ SMD Type Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON time Storage time Fall time Symbol ICBO IEBO h FE f T Cob VCE (sat) VBE (sat) V (BR) CBO V (BR) CEO V(BR)EBO VCEO(SUS) ton tstg tf IC=1A,IB1=0.2A,IB2=-0.4A,RL=400 Ù,VCC=400V Testconditons VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.1A VCE = 5 V, IC = 0.5A VCE = 10 V, IC =0.1A VCB=10V,f=1MHz IC = 0.75 A, IB = 0.15 A IC =0.75 A, IB = 0.15 A IC = 1 m A, IE = 0 IC = 5 m A,RBE= IE=1m A,IC=0 IC=0.75A,IB1=-IB2=0.15A,L=50m H 1100 800 7 800 10 8 Min Transistors Typ Max 10 10 40 Unit ìA ìA 15 35 2.0 1.5 MHz p F V V V V V V 0.5 3.0 0.3 ìs Switching Time...