2SC4505
2SC4505 is NPN Epitaxial Planar Silicon Transistors manufactured by Kexin Semiconductor.
Features
High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10m A / 1m A. High switching speed, typically tf = 1.7ìs at Ic =100m A.
Absolute Maximum Ratings Ta = 25
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC Rating 400 400 7 0.1 0.2 Collector Power Dissipation Junotion Temperature storage Temperature
- 1 Single pulse pw=20ms,Duty=1/2
- 2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg 0.5 2 150 -55 to 150 Unit V V V A A
- 1 W
- 2 W
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SMD Type
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) h FE f T Cob ton tstg tf IC=50ìA IC=1m A IE=50ìA VCB=400V VEB=6V IC/IB=10m A/1m A IC/IB=10m A/1m A VCE=10V , IC=10m A VCE=10V , IE=-10m A , f=10MHz VCB=10V , IE=0A , f=1MHz IC=-100m A RL=1.5kÙ IB1=-IB2=10m A VCC=-150V 82 Testconditons
Transistors
Min 400 400 7
Typ
Max
Unit V V V
10 10 0.05 0.5 1.5 270 20 7 1 5.5 1.7
ìA ìA V V
MHz p F µs µs µs h FE Classification
TYPE Rank Marking CEP P 82 to 180 CEQ Q 120 to 270
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