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2SC4132 Datasheet

NPN Epitaxial Planar Silicon Transistors

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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors
2SC4132
Features
High breakdown voltage
Low collector output capacitance
High transition frequency Ft=80MHz)
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
CollectorPower Dissipation
PC
Junotion Temperature
storage Temperature
*1 Single pulse pw=10ms
*2 When mounted on a 40X40X0.7 mm ceramic board.
TJ
Tstg
Rating
120
120
5
2
3
0.5
2
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter out current
Emitter-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Testconditons
IC=50ìA
IC=1mA
IE=50ìA
VCB=100V
VEB=4V
IC/IB=1A/0.1A
VCE/IC=5V/0.1A
VCE=5V.IE=-0.1A,f=30MHz
VCB=10V,IE=0A,f=1MHz
Unit
V
V
V
A
A *1
W *2
W
Min Typ Max Unit
120 V
120 V
5V
1 ìA
1 ìA
0.4 V
82 390
80 MHz
20 pF
hFE Classification
TYPE
Rank
Marking
CBP
P
82 to 180
CBQ
Q
120 to 270
CBR
R
180 to390
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Part Number 2SC4132
Description NPN Epitaxial Planar Silicon Transistors
Maker Kexin
Total Page 1 Pages
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