High voltage and large current capcity Adoption of MBIT process Fast switohing time
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
3.80
+ 0 .1 55 .5 5 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
+02.65 .25 -0.1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector.
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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC4027
Features
High voltage and large current capcity Adoption of MBIT process Fast switohing time
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
3.80
+ 0 .1 55 .5 5 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
+02.65 .25 -0.1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25
TC = 25 Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Icp
PC
Tj Tstg
Rating 180 160 6 1.5 2.
2SC4027 Datasheet
