0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55 to +125 Unit V V V mA mA mW
+0.1 0.38-0.1
0-0.1
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SMD Type
2SC3122
Electri.
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SMD Type
Silicon NPN Epitaxial 2SC3122
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics
0.55
High Gain: Gpe=24dB(Typ.)(f=200MHz)
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55 to +125 Unit V V V mA mA mW
+0.1 0.38-0.1
0-0.1
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2SC3122 Datasheet
