Datasheet4U Logo Datasheet4U.com

2SA1900 - Medium power transistor

Features

  • Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Symbol VCEO VCBO VEBO IC Collector power dissipation PC Jumction temperature Storage temperature Tj Tstg.
  • 1 Single pulse Pw=20ms, Duty=1/2.
  • 2 When mounted on a 40X40X0.7mm seramic board. Rating -60 -50 -5 -1 -2 0.5 2 150 -55 to +150 U.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1900 Medium Power Transistor Rohm
2SA1900U PNP Transistor SEMTECH
2SA1905 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor
2SA1906 High-speed Switching Transistor ROHM
2SA1907 Silicon PNP Transistor Sanken electric

Other Datasheets by Kexin Semiconductor

Part Number Description
2SA1948 PNP Transistors
2SA1013 PNP Transistors
2SA1015 PNP Transistor
2SA1036K Medium Power Transistor
2SA1121 Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text
SMD Type Medium power transistor 2SA1900 TransistIoCrs Features Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Symbol VCEO VCBO VEBO IC Collector power dissipation PC Jumction temperature Storage temperature Tj Tstg *1 Single pulse Pw=20ms, Duty=1/2 *2 When mounted on a 40X40X0.7mm seramic board. Rating -60 -50 -5 -1 -2 0.
Published: |