High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient
Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Rth j-a
Rating 60 50 6 100 200 200
-65 to +150 150
-65 to +150 6.
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SMD Type
Transistors
NPN General Purpose Transistor 2PD601AW
Features
High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient
Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Rth j-a
Rating 60 50 6 100 200 200
-65 to +150 150
-65 to +150 625
Unit V V V mA mA
mW
K/W
1 Emitter 2 Base 3 Collector
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2PD601AW Datasheet
