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Kexin

2N7002K Datasheet Preview

2N7002K Datasheet

N-Channel Enhanceent Mode Field Effect Transistor

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SMD Type
MOSFET
N-Channel Enhancement MOSFET
2N7002K
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ƽ ESD Protected 2KV HBM
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage -Continuous
Drain Current
-Continuous ( Note:1)
-Pulsed
Power Dissipation (Note 1)
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB.
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage (Note.2)
Zero Gate Voltage Drain Current (Note.2)
Gate-Body Leakage Current
(Note.2)
Gate Threshold Voltage
(Note.2)
Static Drain-Source On-Resistance (Note.2)
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-On DelayTime
Turn-Off DelayTime
(Note.2)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
D rain
Gate
Gate
Protection
Diode
Source
Symbol
VDS
VGS
ID
PD
RthJA
TJ
Tstg
Rating
60
±20
300
800
350
357
150
-55 to 150
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit
V
mA
mW
ć/W
ć
Unit: mm
0.1 +0.05
-0.01
1.1BaGsAeTE
2.2EmSiOtUtReCrE
3 DRAIN
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
| Yfs |
Ciss
Coss
Crss
Qg
td(on)
td(off)
Test Conditions
ID=100­A, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VDS = 10V, ID = 1mA
VGS=10V, ID=500mA
VGS=10V, ID=50mA
VGS=10V, ID=200mA
VGS=0V, VDS=25V, f=1MHz
VGS=4.5V, VDS=15V, ID=200mA
ID=200mA, VDS=30V,
RG=10ȍ,VGEN=10V,RL=150ȍ
Min Typ Max Unit
60 V
1 ­A
±10 uA
1 1.6 2.5 V
2
¡
3
80 ms
50
25 pF
5
0.8 nC
20
ns
40
Note: 2. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
K72
www.kexin.com.cn 1




Kexin

2N7002K Datasheet Preview

2N7002K Datasheet

N-Channel Enhanceent Mode Field Effect Transistor

No Preview Available !

SMD Type
MOSFET
2N7002K
Typical Characteristics
1.4
1.2
1.0
V GS = 10V
8V
6V
5V
4V
3V
0.8
0.6
10V 8V
6V
5V
4V
0.4
0.2
0
0
3V
12
34
V DS ,DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
1.00
V DS = 10V
Pulsed
T A = 125°C
0.10
T A = 75°C
T A = 25°C
0.01
1
T A = -25°C
1.5 2 2.5 3 3.5 4 4.5 5
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
1.5
V DS = 10V
ID = 1mA
Pulsed
1
0.5
0
-50
-25 0 25 50 75 100 125
T ch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Tem perature
150
10
T A = 150°C
T A = 125°C
V GS = 5V
Pulsed
T A = 85°C
1
T A = -55 °C
T A = 25°C T A = 0°C T A = -25°C
0.1
0.001
0.01
0.1
ID , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
1
10
V GS = 10V
Pulsed
T A = 125°C
T A = 150°C
T A = 85°C
1
T A = 25°C
T A = 0°C
T A = -55°C
T A = -25°C
0.1
0.001
0.01
0.1
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
7
6
ID = 300mA
5
T A = 25°C
Pulsed
4
3
2
ID = 150mA
1
0
0
2 4 6 8 10 12 14 16 18 20
V GS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
2 www.kexin.com.cn


Part Number 2N7002K
Description N-Channel Enhanceent Mode Field Effect Transistor
Maker Kexin
Total Page 3 Pages
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