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InGaAs Photodiode
Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option
(Ceramic, Metal stem, TO-CAN)
Applications • Optical switches • Sensors and industrial controls
KPDE0301M51
1. Cathode 2. Anode
Unit: mm
Absolute Maximum Ratings
Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature
Symbol
VR IR IF Topr Tstg
Value 20 500 50
-20 to +80 -30 to +100
Unit Note
V µA mA oC Avoid dew condensation oC Avoid dew condensation
Electrical and Optical Characteristics (Ta=25oC unless otherwise noted)
Parameter Active diameter
Sensitive wavelength
Responsivity Dark current Terminal capacitance
Symbol D
λ
R ID Ct
Min.
900 -
Typ.
φ0.3 1500 (λp) 0.9
4
Max.
KPDE0301M51 Datasheet
