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KODENSHI KOREA

SUN0465F Datasheet Preview

SUN0465F Datasheet

New Generation N-Ch Power MOSFET

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SUN0465F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=2.3Ω (Typ.)
Low gate charge: Qg=10nC (Typ.)
Low reverse transfer capacitance: Crss=4.7pF (Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN0465F
SUN0465
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AUAKUK
◎△YMDD
SUNΔ0Y4M6D5 D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) YMDD
-. : Option Code (H: Halogen Free)
-. : Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25°C
Tc=100°C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 03-DEC-13
KSD-T0O131-000
Rating
650
±30
4
2.53
16
86.7
4
3.2
32
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
www.auk.co.kr
1 of 8




KODENSHI KOREA

SUN0465F Datasheet Preview

SUN0465F Datasheet

New Generation N-Ch Power MOSFET

No Preview Available !

Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SUN0465F
Rating
Max. 3.9
Max. 62.5
Unit
°C/W
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=650V, VGS=0V
VDS=650V, Tc=150°C
VDS=0V, VGS=±30V
VGS=10V, ID=2A
VDS=10V, ID=2A
VDS=25V, VGS=0V,
f=1.0MHz
VDS=325V, ID=4A,
RG=25
VDS=520V, VGS=10V,
ID=4A
Min.
650
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-5
-1
- 100
- ±100
2.3 3
4.4 -
721 -
54 -
4.7 -
42 -
28 -
69 -
22 -
10 14
5-
1.5 -
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, ISD=4A
trr ISD=4A, VGS=0V
Qrr dIF/dt=100A/us
--4
- - 16
- - 1.4
- 498 -
- 0.98 -
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=10mH, IAS=4A, VDD=50V, RG=25, Starting TJ=25°C
3. Pulse test: Pulse width300us, Duty cycle2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 03-DEC-13
KSD-T0O131-000
www.auk.co.kr
2 of 8


Part Number SUN0465F
Description New Generation N-Ch Power MOSFET
Maker KODENSHI KOREA
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