* Drain-source breakdown voltage: BVDSS=100V
* Low gate charge device
* Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
* Advanced trench process tech.

SNN01Z10Q

SNN01Z60Q

SNN0310Q

SNN0630Q

SNN5010D

SN-A2970

SN-NE2121ADXBRGB-N

SN03A

SN03AAP

SN03ACP

SN03ACPA

SN0403

SN0503

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts