* Drain-source breakdown voltage: BVDSS=900V
* Low gate charge device: Qg=13nC (Typ.)
* Low drain-source On-resistance: RDS(on)=1Ω (Typ.)
* Advanced trenc.

SJMN04A65D

SJMN05A70D

SJMN05A70I

SJMN05S60FD

SJMN065R65W

SJMN078R60W

SJMN07A60FD

SJMN07S65FD

SJMN088R65FD

SJMN088R65W

SJMN11A60D

SJMN11A70I

SJMN11S60I

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