KIA2N60H mosfet equivalent, n-channel mosfet.
* RDS(ON)=4.1Ω@VGS=10V.
* Low gate charge (typical 9nC)
* High ruggedness
* Fast switching capability
* Avalanche energy specified
* Improved dv/d.
such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2. Features
* RDS(ON)=4.
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2. Features
* RDS.
Image gallery
TAGS
Download (Size : 485.47KB)