7N60H
Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology.
Key Features
- RDS(on)=1.0Ω @ VGS=10V
- Ultra low gate charge (typical 27nC)
- Low reverse transfer capacitance
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
