7N60H mosfet equivalent, n-channel mosfet.
* RDS(on)=1.0Ω @ VGS=10V
* Ultra low gate charge (typical 27nC)
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy test.
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the av.
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