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KEDA

KDG40N120H1 Datasheet Preview

KDG40N120H1 Datasheet

IGBT

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IGBT
Features
1200V,40A
VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
General Description
KEDA NPT IGBTs offer lower losses and higher energy
efficiency for application such as IH (induction heating),UPS,
general inverter and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
IC
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 )
Continuous Collector Current ( TC=100)
ICM Pulsed Collector Current (Note 1)
IF Diode Continuous Forward Current ( TC=100 )
IFM Diode Maximum Forward Current (Note 1)
tsc Short Circuit Withstand Time
Maximum Power Dissipation ( TC=25 )
PD Maximum Power Dissipation ( TC=100)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
KDG40N120H1
Value
1200
+ 30
80
40
110
40
75
10
300
120
-55 to +150
-55 to +150
Max.
0.42
0.83
40
Units
V
V
A
A
A
A
A
us
W
W
Units
/ W
/ W
/ W
www.kedasemi.com
-1-
Total 9Pages
CLD20130707




KEDA

KDG40N120H1 Datasheet Preview

KDG40N120H1 Datasheet

IGBT

No Preview Available !

KDG40N120H1
Electrical Characteristics (TC=25unless otherwise noted )
Symbol
Parameter
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
VGE(th)
VCE(sat)
Qg
Qge
Qgc
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
t d(on)
tr
t d(off)
tf
Eon
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Turn-on Switching Loss
Eoff Turn-off Switching Loss
Ets Total Switching Loss
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RGint
Integrated gate resistor
Test Conditions
VGE= 0V, IC= 250uA
VCE= 1200V, VGE= 0V
VGE=30V, VCE= 0V
VGE= -30V, VCE= 0V
VGE= VCE, IC= 250uA
VGE=15V, IC= 40A
VCC=960V
VGE=15V
IC=40A
VCC=600V
VGE=15V
IC=40A
RG=28
Inductive Load
TC=25
VCE=25V
VGE=0V
f = 100kHz
Min.
1200
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.3
195
90
105
68
105
680
97
5
3.6
8.6
930
215
110
3.8
Max.
-
250
100
-100
6
-
-
-
-
-
-
-
-
-
-
Units
V
uA
nA
nA
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
pF
pF
pF
Ω
Electrical Characteristics of Diode (TC=25unless otherwise noted)
Symbol
Parameter
VF Diode Forward Voltage
t r r Diode Reverse Recovery Time
I r r Diode peak Reverse Recovery Current
Qr r Diode Reverse Recovery Charge
Test Conditions
IF=40A
VCE = 600V
IF= 40A
dIF/dt = 200A/us
Min. Typ.
- 2.5
- 160
- 12
- 1040
Max.
3.5
Units
V
ns
A
nC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
www.kedasemi.com
-2-
Total 9Pages
CLD20130707


Part Number KDG40N120H1
Description IGBT
Maker KEDA
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