IGBT
Features
1200V,40A
VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
General Description
KEDA NPT IGBTs offer lower losses and higher energy
efficiency for application such as IH (induction heating),UPS,
general inverter and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
IC
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 ℃)
Continuous Collector Current ( TC=100℃)
ICM Pulsed Collector Current (Note 1)
IF Diode Continuous Forward Current ( TC=100 ℃)
IFM Diode Maximum Forward Current (Note 1)
tsc Short Circuit Withstand Time
Maximum Power Dissipation ( TC=25 ℃)
PD Maximum Power Dissipation ( TC=100℃)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
KDG40N120H1
Value
1200
+ 30
80
40
110
40
75
10
300
120
-55 to +150
-55 to +150
Max.
0.42
0.83
40
Units
V
V
A
A
A
A
A
us
W
W
℃
℃
Units
℃/ W
℃/ W
℃/ W
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Total 9Pages
CLD20130707
