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KEDA

KDG25N120H1 Datasheet Preview

KDG25N120H1 Datasheet

IGBT

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KDG25N120H1
IGBT
Features
1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V
High speed switching
Higher system efficiency
Soft current turn-off waveforms
General Description
KEDA IGBTs offer lower losses and higher energy efficiency
for application such as IH (induction heating),UPS, General
inverter and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 )
IC Continuous Collector Current ( TC=100)
ICM Pulsed Collector Current (Note 1)
IF Diode Continuous Forward Current ( TC=100 )
IFM Diode Maximum Forward Current (Note 1)
Maximum Power Dissipation ( TC=25 )
PD Maximum Power Dissipation ( TC=100)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for DIODE
Thermal Resistance, Junction to Ambient
Value
1200
+ 30
62
25
80
15
80
180
72
-55 to +150
-55 to +150
Max.
0.58
0.85
40
Units
V
V
A
A
A
A
A
W
W
Units
/ W
/ W
/ W
www.kedasemi.com
-1-
Total 9 Pages
Rev.2.1 June.2011




KEDA

KDG25N120H1 Datasheet Preview

KDG25N120H1 Datasheet

IGBT

No Preview Available !

KDG25N120H1
Electrical Characteristics (TC=25unless otherwise noted )
Symbol
Parameter
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
VGE(th)
VCE(sat)
Qg
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
t d(on)
Turn-on Delay Time
t r Turn-on Rise Time
t d(off)
Turn-off Delay Time
t f Turn-off Fall Time
Eon Turn-on Switching Loss
Eoff Turn-off Switching Loss
Ets Total Switching Loss
Cies Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
RGint
Integrated gate resistor
Test Conditions
VGE= 0V, IC= 250uA
VCE= 1200V, VGE= 0V
VGE=30V, VCE= 0V
VGE= -30V, VCE= 0V
VGE= VCE, IC= 250uA
VGE=15V, IC= 20A
VCC=960V
VGE=15V
IC=25A
VCC=600V
VGE=15V
IC=20A
RG=28
Inductive Load
TC=25
VCE=25V
VGE=0V
f = 1kHz
Min.
1200
-
-
-
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.85
Typ.
-
-
-
-
-
2.4
150
20
90
45
59
375
210
2.7
1.8
4.5
620
109
46
1.9
Max.
-
250
100
-100
6.0
3.0
170
30
100
-
-
-
-
-
-
-
-
-
-
1.95
Units
V
uA
nA
nA
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
pF
pF
pF
Ω
Electrical Characteristics of Diode (TC=25unless otherwise noted)
Symbol
VF
trr
Irr
Qr r
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode peak Reverse Recovery Current
Diode Reverse Recovery Charge
Test Conditions
IF=15A
VCE = 600V
IF=15A
dIF/dt = 500A/us
Min. Typ.
- 1.4
- 209
- 26
- 3300
Max.
2.0
Units
V
ns
A
nC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
www.kedasemi.com
-2-
Total 9 Pages
Rev.2.1 June.2011


Part Number KDG25N120H1
Description IGBT
Maker KEDA
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