900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KEDA

KDG15N120H2 Datasheet Preview

KDG15N120H2 Datasheet

IGBT

No Preview Available !

IGBT
Features
1200V,15A
VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
General Description
KEDA NPT IGBTs offer lower losses and higher energy
efficiency for application such as IH (induction heating),UPS,
general inverter and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
IC
Gate-Emitter Voltage
Continuous Collector Current ( TC=25 )
Continuous Collector Current ( TC=100)
ICM Pulsed Collector Current (Note 1)
IF Diode Continuous Forward Current ( TC=100 )
IFM Diode Maximum Forward Current (Note 1)
tsc Short Circuit Withstand Time
Maximum Power Dissipation ( TC=25 )
PD Maximum Power Dissipation ( TC=100)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
KDG15N120H2
Value
1200
+ 30
30
15
90
15
120
10
170
68
-55 to +150
-55 to +150
Max.
0.51
0.85
40
Units
V
V
A
A
A
A
A
us
W
W
Units
/ W
/ W
/ W
www.kedasemi.com
-1-
Total 4 Pages
Rev1 February. 2012




KEDA

KDG15N120H2 Datasheet Preview

KDG15N120H2 Datasheet

IGBT

No Preview Available !

KDG15N120H2
Electrical Characteristics (TC=25unless otherwise noted )
Symbol
Parameter
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
VGE(th)
VCE(sat)
Qg
Qge
Qgc
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
t d(on)
tr
t d(off)
tf
Eon
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Turn-on Switching Loss
Eoff Turn-off Switching Loss
Ets Total Switching Loss
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RGint
Integrated gate resistor
Test Conditions
VGE= 0V, IC= 250uA
VCE= 1200V, VGE= 0V
VGE=30V, VCE= 0V
VGE= -30V, VCE= 0V
VGE= VCE, IC= 250uA
VGE=15V, IC= 20A
VCC=960V
VGE=15V
IC=15A
VCC=600V
VGE=15V
IC=15A
RG=28
Inductive Load
TC=25
VCE=25V
VGE=0V
f = 100kHz
Min.
1200
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.2
68
22
23
32
38
223
74
1.6
0.6
2.2
481
89
28
3.8
Max.
-
250
100
-100
5.5
-
-
-
-
-
-
-
-
-
-
Units
V
uA
nA
nA
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
pF
pF
pF
Ω
Electrical Characteristics of Diode (TC=25unless otherwise noted)
Symbol
Parameter
VF Diode Forward Voltage
t r r Diode Reverse Recovery Time
I r r Diode peak Reverse Recovery Current
Qr r Diode Reverse Recovery Charge
Test Conditions
IF=15A
VCE = 600V
IF= 15A
dIF/dt = 500A/us
Min. Typ.
- 2.0
- 110
- 16
- 1060
Max.
2.4
Units
V
ns
A
nC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
www.kedasemi.com
-2-
Total 4 Pages
Rev1 February. 2012


Part Number KDG15N120H2
Description IGBT
Maker KEDA
PDF Download

KDG15N120H2 Datasheet PDF






Similar Datasheet

1 KDG15N120H IGBT
KEDA
2 KDG15N120H2 IGBT
KEDA
3 KDG15N120HN IGBT
KEDA





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy