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KDG120N04AD Datasheet IGBT

Manufacturer: KEDA

Overview: IGBT.

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General Description

KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications.

Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃ ) IC Continuous Collector Current ( TC=100℃ ) ICM Pulsed Collector Current (Note 1) IF Diode Continuous Forward Current ( TC=100 ℃ ) IFM Diode Maximum Forward Current (Note 1) Maximum Power Dissipation ( TC=25 ℃ ) PD Maximum Power Dissipation ( TC=100℃ ) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resi

Key Features

  • 1200V,20A.
  • VCE(sat)(typ. )=2.7V@VGE=15V,IC=20A.
  • High speed switching.
  • Higher system efficiency.
  • Soft current turn-off waveforms KDG120N04AD General.

KDG120N04AD Distributor & Price

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