KDF9N90A - N-channel MOSFET

General Description

KDF9N90A is well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

900V,9A.
RDS(on)=1.05Ω @VGS=10V,ID=4.5A.
High speed switching.
High ruggedness.
100% avalanche tested.
Improved dv/dt capability General.

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KDF9N90A n-channel mosfet by KEDA - Datasheet Preview

Datasheet Details

Part number	KDF9N90A
Manufacturer	KEDA
File Size	821.01 KB
Description	N-channel MOSFET
Datasheet	KDF9N90A Datasheet

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N-channel MOSFET Features  900V,9A  RDS(on)=1.05Ω @VGS=10V,ID=4.5A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt capability General Description KDF9N90A is well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Absolute Maximum Ratings Symbol Parameter VDSS VGS ID IDM EAS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃ ) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) dV/dt Peak Diode Recovery dv/dt(Note 3) Maximum Power Dissipation ( TC=25 ℃ ) PD Maximum Power Dissipation ( TC=100 ℃) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Notes: 1.