900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KEDA

KDF9N90A Datasheet Preview

KDF9N90A Datasheet

N-channel MOSFET

No Preview Available !

N-channel MOSFET
Features
900V,9A
RDS(on)=1.05Ω @VGS=10V,ID=4.5A
High speed switching
High ruggedness
100% avalanche tested
Improved dv/dt capability
General Description
KDF9N90A is well suited for high efficiency switched
mode power supplies, active power factor correction
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
dV/dt
Peak Diode Recovery dv/dt(Note 3)
Maximum Power Dissipation ( TC=25 )
PD Maximum Power Dissipation ( TC=100 )
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ=25,L=21mH,RG=50Ω ,ID=9A,VGS=10V
3. ISD9A, di/dt200A/us, VDDBVDSS. Starting TJ=25
Thermal data
Symbol
Parameter
Rth J-C
Rth J-A
Thermal Resistance, Junction to case
Thermal Resistance, Junction to ambient
www.kedasemi.com
-1-
Total 8 Pages
KDF9N90A
Value
900
+ 25
9
36
900
4
280
112
-55 to +150
-55 to +150
Units
V
V
A
A
mJ
V/ns
W
W
Max.
0.45
40
Units
/W
/W
Rev1.1 April. 2012




KEDA

KDF9N90A Datasheet Preview

KDF9N90A Datasheet

N-channel MOSFET

No Preview Available !

KDF9N90A
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions Min.
BVDSS
IDSSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=0V, ID=250uA
VDS=900V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=4.5A
VDD=720V
VGS=10V
ID=9A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDS=450V
VGS=10V
ID=9A
RG=25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 100kHz
900
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
1.05
45
14
18
50
120
100
80
2200
180
15
Max. Units
-
10
100
-100
4.5
-
-
-
-
-
-
-
-
-
-
-
V
uA
nA
nA
V
Ω
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage
VGS=0V,IS=9A
IS Continuous Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V,IS=9A
dIF/dt=100A/us
- - 1.5
- -9
36
- 550
- 6.5
V
A
A
ns
uC
www.kedasemi.com
-2-
Total 8 Pages
Rev1.1 April. 2012


Part Number KDF9N90A
Description N-channel MOSFET
Maker KEDA
PDF Download

KDF9N90A Datasheet PDF






Similar Datasheet

1 KDF9N90A N-channel MOSFET
KEDA





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy