N-Channel MOSFET
Preliminary
Features
20V,6A,Rds(on)<37.5mΩ@Vgs=2.5V
20V,6A,Rds(on)<27.5mΩ@Vgs=4.5V
Fast Switching
Surface Mount Package
Ideal for Li Ion Battery Pack Applications
KDF8205T
General Description
This Power MOSFET is produced using KEDA’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have
a high rugged avalanche characteristics. These devices are well
suited for low voltage application such as Li Ion Battery, DC/DC
converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
PD
Drain-Source Voltage
Continuous Drain Current (TC=25 ℃)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Maximum Power Dissipation (TC=25 ℃)
Derating Factor above 25℃
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance, Junction to Ambient
Value
20
6
30
+ 12
1.5
0.96
-55 to +150
-55 to +150
Units
V
A
A
V
W
W/℃
℃
℃
Max.
83
Units
℃/ W
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Total 4 Pages
Preliminary February.2009
