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KEDA

KDF8205T Datasheet Preview

KDF8205T Datasheet

N-Channel MOSFET

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N-Channel MOSFET
Preliminary
Features
20V,6A,Rds(on)<37.5mΩ@Vgs=2.5V
20V,6A,Rds(on)<27.5mΩ@Vgs=4.5V
Fast Switching
Surface Mount Package
Ideal for Li Ion Battery Pack Applications
KDF8205T
General Description
This Power MOSFET is produced using KEDA’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have
a high rugged avalanche characteristics. These devices are well
suited for low voltage application such as Li Ion Battery, DC/DC
converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
PD
Drain-Source Voltage
Continuous Drain Current (TC=25 )
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-a
Parameter
Thermal Resistance, Junction to Ambient
Value
20
6
30
+ 12
1.5
0.96
-55 to +150
-55 to +150
Units
V
A
A
V
W
W/
Max.
83
Units
/ W
www.kedasemi.com
-1-
Total 4 Pages
Preliminary February.2009




KEDA

KDF8205T Datasheet Preview

KDF8205T Datasheet

N-Channel MOSFET

No Preview Available !

KDF8205T
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-State Resistance
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
VDS=18V, VGS=0V
VGS=8V, VDS=0V
VGS=-8V, VDS=0V
VGS=VDS, ID=250uA
VGS=2.5V, ID=5A
VGS=4.5V, ID=6A
VDD=10V
VGS=4.5V
ID=6A
(Note 2)
VDD=10V,VGS=4.5V
ID=1A,RG=6
TC=25
(Note 2)
VDS=8V
VGS=0V
f = 100KHz
Min. Typ. Max. Units
20 - - V
- - 1 uA
- - 100 nA
- - -100 nA
0.5 - 1.2 V
- 30 37.5 mΩ
- 25 27.5
- 4.86 -
nC
- 0.92 -
nC
- 1.4 - nC
- 9 - ns
- 10 - ns
- 22 - ns
- 6 - ns
- 562 -
pF
- 106 -
pF
- 75 - pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
VSD Forward On Voltage
VGS=0V, IS1.7A
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Width ≤ 300 us; Duty Cycle≤2%
Min.
-
-
Typ.
-
-
Max.
1.7
1.2
Units
A
V
www.kedasemi.com
-2-
Total 4 Pages
Preliminary February.2009


Part Number KDF8205T
Description N-Channel MOSFET
Maker KEDA
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