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KEDA

KDF75N75P Datasheet Preview

KDF75N75P Datasheet

POWER MOSFET

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POWER MOSFET
Features
75V,80A N-Channel MOSFET
RDS(on)(typ.)=6.5mΩ@VGS=10V,ID=40A
High ruggedness
Fast switching
100% avalanche tested
Exceptional dv/dt capability
Applications
Switching application
KDF75N75P
Absolute Maximum Ratings
Symbol
VDSS
VGS
ID
IDM
EAS
PD
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Continuous Drain Current(TC=100)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
Maximum Power Dissipation ( TC=25 )
Maximum Power Dissipation ( TC=100)
Operating Junction Temperature Range
Storage Temperature Range
Value
75
+25
80
70
360
1200
300
150
-55 to +150
-55 to +150
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25,L=1.0mH,RG=25Ω,ID=37A,VGS=10V
Units
V
V
A
A
A
mJ
W
W
www.kedasemi.com
-1-
Total 10 Pages
Rev.1 Nov. 2011




KEDA

KDF75N75P Datasheet Preview

KDF75N75P Datasheet

POWER MOSFET

No Preview Available !

KDF75N75P
Thermal data
Symbol
Parameter
Max.
Rth J-C
Thermal Resistance, Junction to case
0.6
Electrical Characteristics (TC=25unless otherwise noted)
Units
/ W
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
BVDSS
IDSSS
IGSS
VGS(th)
RDS(on)
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
VGS=0V, ID=250uA
VDS=75V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=40A
75 V
1 uA
100 nA
-100 nA
2 3 4V
6.5 9 mΩ
gfs Forward Transconductance
VDS=15V, ID=30A
28 S
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=60V
VGS=10V
ID=40A
89 120 nC
21 nC
33 nC
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDD=40V
VGS=10V
ID=40A
RG=5
VDS=30V
VGS=0V
f = 1MHz
- 47 -
- 25 -
- 75 -
- 36 -
- 3600 -
- 480 -
- 180 -
ns
ns
ns
ns
pF
pF
pF
RGint
Integrated gate resistor
1.24 Ω
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
VSD Forward On Voltage
IS Continuous Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
Test Conditions
VGS=0V,IS=40A
VDD=25V,IS=40A
dIF/dt=100A/us
Min. Typ.
- 0.88
- 64
- 138
Max. Units
1.2 V
80 A
ns
nC
www.kedasemi.com
-2-
Total 10 Pages
Rev.1 Nov. 2011


Part Number KDF75N75P
Description POWER MOSFET
Maker KEDA
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KDF75N75P Datasheet PDF






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