60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced usi.

This Power MOSFET is produced using KEDA’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for low volta.

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