KDF60N04P
N-Channel MOSFET
Preliminary
Features
60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using KEDA’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
Drain-Source Voltage
Continuous Drain Current (TC=25 ℃)
Continuous Drain Current (TC=100℃)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 ℃)
Derating Factor above 25℃
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Value
60
65
46
260
+ 30
1597
140
0.9
-55 to +150
-55 to +150
Units
V
A
A
A
V
mJ
W
W/℃
℃
℃
Max.
1.11
0.5
62.5
Units
℃/ W
℃/ W
℃/ W
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Total 4 Pages
Preliminary February.2009