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KEDA

KDF60N04P Datasheet Preview

KDF60N04P Datasheet

N-channel MOSFET

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KDF60N04P
N-Channel MOSFET
Preliminary
Features
60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V
High Ruggedness
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
General Description
This Power MOSFET is produced using KEDA’s advanced
Trench MOS Technology. This latest technology has been
especially designed to minimize on-state resistance, have a
high rugged avalanche characteristics. These devices are well
suited for low voltage application such as automotive,DC/DC
converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
Drain-Source Voltage
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100)
Pulsed Drain Current (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Maximum Power Dissipation (TC=25 )
Derating Factor above 25
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c
Rth c-s
Rth j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Value
60
65
46
260
+ 30
1597
140
0.9
-55 to +150
-55 to +150
Units
V
A
A
A
V
mJ
W
W/
Max.
1.11
0.5
62.5
Units
/ W
/ W
/ W
www.kedasemi.com
-1-
Total 4 Pages
Preliminary February.2009




KEDA

KDF60N04P Datasheet Preview

KDF60N04P Datasheet

N-channel MOSFET

No Preview Available !

KDF60N04P
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
VGS(th)
RDS(on)
Qg
Gate Threshold Voltage
Drain-Source On-State Resistance
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
t d(on)
Turn-on Delay Time
t r Turn-on Rise Time
t d(off)
Turn-off Delay Time
tf
Ciss
Turn-off Fall Time
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Test Conditions
VGS=0V, ID=250uA
VDS=60V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=50A
VDD=48V
VGS=10V
ID=51A
(Note 3)
VDD=30V,VGS=10V
ID=25A,RG=12
TC=25
(Note 3)
VDS=25V
VGS=0V
f = 1MHz
Min. Typ. Max. Units
60 - - V
- - 250 uA
- - 100 nA
- - -100 nA
2 - 4V
- 8.5 10 mΩ
- - 94 nC
- - 21 nC
- - 43 nC
- 14 - ns
- 45 - ns
- 42 - ns
- 35 - ns
- 2220 -
pF
- 510 -
pF
- 177 -
pF
Source-Drain Diode Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IS Continuous Source Diode Forward Current
ISM Pulsed Source Diode Forward Current (Note 1)
VSD Forward On Voltage
tr r Reverse Recovery Time
VGS=0V, IS=51A
VGS=0V, IS=51A
Qr r Reverse Recovery Charge
dIF/dt = 100A/us
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.85mH, IAS=25A, VDD=50V, RG=25Ω, Starting TJ=25
3. Pulse Width ≤ 300 us; Duty Cycle≤2%
Min.
-
-
-
-
-
Typ.
-
-
-
50
136
Max.
65
260
1.5
95
260
Units
A
A
V
ns
nC
www.kedasemi.com
-2-
Total 4 Pages
Preliminary February.2009


Part Number KDF60N04P
Description N-channel MOSFET
Maker KEDA
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