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KDF260P - N-Channel MOSFET

Description

This Power MOSFET is produced using KEDA’s advanced Planar MOS Technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 200V,56A,Rds(on)(typ)=0.04Ω@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General.

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Datasheet Details

Part number KDF260P
Manufacturer KEDA
File Size 218.32 KB
Description N-Channel MOSFET
Datasheet download datasheet KDF260P Datasheet

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Full PDF Text Transcription

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KDF260P N-Channel MOSFET Preliminary Features 200V,56A,Rds(on)(typ)=0.04Ω@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using KEDA’s advanced Planar MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
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