N-channel MOSFET
Features
500V,20A
RDS(on)=0.21Ω @VGS=10V,ID=10A
High speed switching
High ruggedness
100% avalanche tested
Improved dv/dt capability
General Description
KDF20N50 is well suited for high efficiency switched
mode power supplies, active power factor correction
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25℃ )
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
dV/dt
Peak Diode Recovery dv/dt(Note 3)
Maximum Power Dissipation ( TC=25 ℃ )
PD Maximum Power Dissipation ( TC=100 ℃)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ=25℃,L=5mH,RG=50Ω ,ID=20A,VGS=10V
3. ISD≤20A, di/dt≤200A/us, VDD≤BVDSS. Starting TJ=25℃
Thermal data
Symbol
Parameter
Rth J-C
Rth J-A
Thermal Resistance, Junction to case
Thermal Resistance, Junction to ambient
KDF20N50A
Value
500
+ 30
20
80
1100
4.5
280
112
-55 to +150
-55 to +150
Units
V
V
A
A
mJ
V/ns
W
W
℃
℃
Max.
0.44
40
Units
℃/W
℃/W
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Total 8 Pages
Rev1 March. 2012
