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KEDA

KDF20N50A Datasheet Preview

KDF20N50A Datasheet

N-channel MOSFET

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N-channel MOSFET
Features
500V,20A
RDS(on)=0.21Ω @VGS=10V,ID=10A
High speed switching
High ruggedness
100% avalanche tested
Improved dv/dt capability
General Description
KDF20N50 is well suited for high efficiency switched
mode power supplies, active power factor correction
based on half bridge topology.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(TC=25)
Pulsed Drain Current(Note 1 )
Single Pulsed Avalanche Energy(Note 2)
dV/dt
Peak Diode Recovery dv/dt(Note 3)
Maximum Power Dissipation ( TC=25 )
PD Maximum Power Dissipation ( TC=100 )
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ=25,L=5mH,RG=50Ω ,ID=20A,VGS=10V
3. ISD20A, di/dt200A/us, VDDBVDSS. Starting TJ=25
Thermal data
Symbol
Parameter
Rth J-C
Rth J-A
Thermal Resistance, Junction to case
Thermal Resistance, Junction to ambient
KDF20N50A
Value
500
+ 30
20
80
1100
4.5
280
112
-55 to +150
-55 to +150
Units
V
V
A
A
mJ
V/ns
W
W
Max.
0.44
40
Units
/W
/W
www.kedasemi.com
-1-
Total 8 Pages
Rev1 March. 2012




KEDA

KDF20N50A Datasheet Preview

KDF20N50A Datasheet

N-channel MOSFET

No Preview Available !

KDF20N50A
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions Min.
BVDSS
IDSSS
IGSS
VGS(th)
RDS(on)
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current, Forward
Gate Leakage Current, Reverse
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS=0V, ID=250uA
VDS=500V, VGS=0V
VGS=25V, VDS=0V
VGS= -25V, VDS=0V
VGS=VDS, ID=250uA
VGS=10V, ID=10A
VDD=400V
VGS=10V
ID=20A
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDS=250V
VGS=10V
ID=20A
RG=25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 100kHz
500
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.21
70
20
35
100
400
100
100
2750
420
40
Max. Units
-
1
100
-100
4.5
-
-
-
-
-
-
-
-
-
-
-
V
uA
nA
nA
V
Ω
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Ratings and Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage
VGS=0V,IS=20A
IS Continuous Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
t r r Reverse Recovery Time
Qr r Reverse Recovery Charge
VGS=0V,IS=20A
dIF/dt=100A/us
- - 1.5
- - 20
80
- 510
- 7.3
V
A
A
ns
uC
www.kedasemi.com
-2-
Total 8 Pages
Rev1 March. 2012


Part Number KDF20N50A
Description N-channel MOSFET
Maker KEDA
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