Datasheet4U Logo Datasheet4U.com

KHB011N40P1 - High Voltage MOSFETs

Download the KHB011N40P1 datasheet PDF. This datasheet also covers the KHB011N40F1 variant, as both devices belong to the same high voltage mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ. ) =32.5nC K M L J D N N P H 1 2 3 DIM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB011N40F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB011N40P1
Manufacturer KEC
File Size 105.48 KB
Description High Voltage MOSFETs
Datasheet download datasheet KHB011N40P1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KHB011N40F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
KHB019N20F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
KHB084xxx Colour Transflective / Reflective LCD Modules KYOCERA
KHB0914A01 BAND PASS FILTERS KEC
KHB0959A01 BAND PASS FILTERS KEC

Other Datasheets by KEC

Part Number Description
KHB011N40F1 High Voltage MOSFETs
KHB019N20F1 High Voltage MOSFETs
KHB019N20P1 High Voltage MOSFETs
KHB2D0N60F (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
KHB2D0N60F1 (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB011N40P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q I FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3.
Published: |