PG12FBUSC
PG12FBUSC is Single Line TVS Diode manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
Single Line TVS Diode for ESD Protection in Portable Electronics
Features
350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15k V(Air), 8k V(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects on I/O or power line. Low clamping voltage. Low leakage current.
2 D
DIM A B C M D E F G H I J K
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
1. ANODE 2. ANODE
APPLICATIONS
Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
Marking
MAXIMUM RATING (Ta=25
CHARACTERISTIC Peak Pulse Power (tp=8/20- ì s) Peak Pulse Current (tp=8/20- ì s) Operating Temperature Storage Temperature
)
SYMBOL PPK IPP Tj Tstg RATING 350 15 -55¡- 150 ¡É ¡É -55¡- 150 UNIT W A
2 1
2F
Type Name
2 1
ELECTRICAL CHARACTERISTICS (Ta=25¡É
CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance
)
TEST CONDITION It=1m A VRWM=12V IPP=15A, tp=8/20- ì s VR=0V, f=1MHz MIN. 13.3 TYP. MAX. 12 1 25 100 UNIT V V
- ì A V p F
SYMBOL VRWM VBR IR VC CJ
2008 .9. 11
Revision No : 1
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