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SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation (Tc=25 ) Junction Temperature
Storage Temperature Range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
800 400 10 5 10 2 75 150 -55 150
V V V
A
A W
Equivalent Circuit
C
B
A
F
EG B
Q I
K M
L
D NN
123
J
O C
P H
123
1. BASE 2. COLLECTOR 3. EMITTER
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.
MJE13005D Datasheet
