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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.
FEATURES Excellent Switching Times : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A High Collector Voltage : VCBO=900V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
SYMBOL VCBO VCEO VEBO IC ICP IB
RATING 900 530 9 1.5 3 0.75
UNIT V V V
A
A
Collector Power Dissipation (Tc=25 )
PC
20 W
Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
MJE13003HV
TRIPLE DIFFUSED NPN TRANSISTOR
A B C
H J K
D E
F G
L
M
O NP
12 3
1. EMITTER 2. COLLECTOR 3. BASE
DIM A B C D E F G H J K L M N O P
MILLIMETERS 8.3 MAX
5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX
1.
MJE13003HV Datasheet
