KU3600N10D mosfet equivalent, n-channel mosfet.
VDSS(Min.)= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage.
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.)= 100V, ID= 5A D.
Image gallery
TAGS
Download (Size : 554.22KB)