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KTN2907AS - EPITAXIAL PLANAR PNP TRANSISTOR

Download the KTN2907AS datasheet PDF. This datasheet also covers the KTN2907S variant, as both devices belong to the same epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low Leakage Current : ICEX=-50nA(Max. ) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222S/2222AS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KTN2907S-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KTN2907AS
Manufacturer KEC
File Size 701.94 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTN2907AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2907S KTN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature IC PC Tj -600 mA 350 mW 150 Storage Temperature Range Tstg -55 150 * Package Mounted On 99.5% Alumina 10x8x0.6mm. KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.
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