KTD2854 - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

High DC Current Gain : hFE=2000(Min. ) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.5V(Max. ) (IC=1A, IB=1mA) Complementary to KTB2234.

KTD2854 epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	KTD2854
Manufacturer	KEC
File Size	358.08 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	KTD2854 Datasheet

Full PDF Text Transcription for KTD2854 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTD2854. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA KTD2854 EPITAXIAL PLANAR NPN TRANSISTOR MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FE...

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APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) Low Saturation Voltage : VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) Complementary to KTB2234. MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj Storage Temperature Range Tstg RATING 100 100 8 2 3 0.5 1 150 -55 150 UNIT V V V A A W BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MIL

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