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KTD2424 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
KTD2424
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A)
Complementary to KTB1424.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
80
60
10
3
0.5
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Emitter Breakdown Voltage
V(BR)CEO
DC Current Gain
hFE(1)
hFE(2)
Saturation Voltage
Collector-Emitter
Base-Emitter
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=80V, IE=0
VEB=10V, IC=0
IC=10mA, IB=0
VCE=2V, IC=1A
VCE=2V, IC=3A
IC=3A, IB=30mA
IC=3A, IB=30mA
MIN.
-
-
60
3000
1000
-
-
TYP.
-
-
-
-
-
-
-
MAX.
20
100
-
-
-
1.5
2.0
UNIT
A
A
V
V
2007. 5. 22
Revision No : 1
1/1


Part Number KTD2424
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
Total Page 1 Pages
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