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KTD2161 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • ᴌHigh Breakdown Voltage : VCEO=180V(Min. ) ᴌHigh Transition Frequency : fT=100MHz(Typ. ) ᴌHigh Current : IC(max)=2A ᴌComplementary to KTB1469.

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Datasheet Details

Part number KTD2161
Manufacturer KEC
File Size 69.12 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD2161 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION FEATURES ᴌHigh Breakdown Voltage : VCEO=180V(Min.) ᴌHigh Transition Frequency : fT=100MHz(Typ.) ᴌHigh Current : IC(max)=2A ᴌComplementary to KTB1469. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 200 180 5 2 0.2 25 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ H E Q KTD2161 EPITAXIAL PLANAR NPN TRANSISTOR A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3.
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