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KTD1624 - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. KTD1624.

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Datasheet Details

Part number KTD1624
Manufacturer KEC
File Size 507.41 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1624 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. KTD1624 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC PC* Tj 60 50 6 3 6 600 500 1 150 Storage Temperature Range Tstg -55 150 * : Package mounted on ceramic substrate(250mm2 0.
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