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SEMICONDUCTOR
TECHNICAL DATA
KTD1415V
EPITAXIAL PLANAR NPN TRANSISTOR
INDUSTRIAL USE. HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature
IB PC Tj
Storage Temperature Range
Tstg
RATING 100 100 5 7 0.2 30 150
-55 150
UNIT V V V A A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.
KTD1415V Datasheet
