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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌHigh Breakdown Voltage : VCEO=100V. ᴌLow Collector Saturation Voltage :VCE(sat)=2.0V(Max.). ᴌComplementary to KTA1038.
MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current CollectorPower Dissipation
(Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEB0 IC IE IB
PC
Tj Tstg
RATING 100 100 5 5 -5 0.5
40
150 -55ᴕ150
UNIT V V V A A A
W
ᴱ ᴱ
H
E Q
KTC2018
EPITAXIAL PLANAR NPN TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.00 6.70 MAX 13.60+_ 0.50
5.
KTC2018 Datasheet
