The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A. ᴌCollector Power Dissipation
: PC=30W (Tc=25ᴱ). ᴌComplementary to KTD1351.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING -60 -60 -7 -3 -0.5 2.0 30 150
-55ᴕ150
UNIT V V V A A
W
ᴱ ᴱ
H
E Q
KTB988
EPITAXIAL PLANAR PNP TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
O NG
P
DIM A B
C
D E F G H
J K L M
N
O P Q R S T
MILLIMETERS 10.30 MAX
15.30 MAX
0.80 Φ3.60 +_ 0.20
3.
KTB988 Datasheet
