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SEMICONDUCTOR
TECHNICAL DATA
KTA1666
EPITAXIAL PLANAR PNP TRANSISTOR
30Ω J
BW E
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES ᴌLow Saturation Voltage
: VCE(sat)=-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.) ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate) ᴌSmall Flat Package. ᴌComplementary to KTC4379.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IB PC PC * Tj
-50 -50 -5 -2 -0.4 500 1 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTA1666 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V A A mW W ᴱ ᴱ
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.
KTA1666 Datasheet
