High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ. ). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4373.
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J B
ED
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High Voltage : VCEO=-120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTC4373.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-120
Collector-Emitter Voltage
VCEO
-120
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -800
Base Current
IB -160
Collector Power Dissipation
PC 500 PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTA1661 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V mA mA mW W
KTA1661
EPITAXIAL PLANAR PNP TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.
KTA1661 Datasheet
