KPS11N65D mosfet equivalent, n-channel mosfet.
VDSS=650V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 28nC
MAXIMUM RATING (Tc=25 )
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RATING
Drain-Source Voltage Gat.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplie.
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