KPM8N60F mosfet equivalent, n-channel mosfet.
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)=16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
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RATING
Drain-Source Voltage
VDSS.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics. It is mainly suitable for active power factor correction and swit.
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