KPM11N60D mosfet equivalent, n-channel mosfet.
VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
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RATING
Drain-Source Voltage
VD.
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics. It is mainly suitable for active power factor correction and swit.
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