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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KN2907S/2907AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KN2222S KN2222AS
Collector-Base Voltage
VCBO
60
75 V
Collector-Emitter Voltage
VCEO
30
40 V
Emitter-Base Voltage
VEBO
5
6V
Collector Current
IC 600 mA
Collector Power Dissipation (Ta=25 )
PC PC *
150 mW
350
Junction Temperature Tj 150
Storage Temperature Range
Tstg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
KN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.
KN2222AS Datasheet
