KML0D4N20E mosfet equivalent, n-channel mosfet.
VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design
MAXIMUM RATING (Ta.
It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter.
FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell.
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